Premium
Temperature dependences of the electrical conductivity and hall coefficient of indium telluride single crystals
Author(s) -
Hussein S. A.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240616
Subject(s) - hall effect , electrical resistivity and conductivity , indium , atmospheric temperature range , electron mobility , analytical chemistry (journal) , materials science , conductivity , isotropy , chemistry , band gap , single crystal , condensed matter physics , optics , crystallography , thermodynamics , optoelectronics , physics , chromatography , quantum mechanics
Conductivity type, carrier concentration and carrier mobility of InTe samples grown by Bridgmann technique were determined by the Hall effect and electrical conductivity measurements. The study was performed in the temperature range 150–480 K. Two samples with different growth rate were used in the investigation. The samples under test were P‐type conducting, in accordance with previous measurements of undoped material. The Hall coefficient was found to be isotropic yielding room temperature hole concentration in the range 10 15 – 10 16 cm −3 . The hole mobilities of InTe samples were in the range 1.17 × 10 3 – 2.06 × 10 3 cm 2 /V · sec at room temperature. The band – gap of InTe determined from Hall coefficient studies has been obtained equal to 0.34 ev. The scattering mechanism was checked, and the electrical properties were found to be sensitive to the crystal growth rate.