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Etch features in bismuth germanate (Bi 4 Ge 3 O 12 ) single crystal
Author(s) -
Péter Á.,
Polgár K.,
Contreras L.,
Dieguez E.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240611
Subject(s) - bismuth germanate , bismuth , etching (microfabrication) , materials science , germanate , single crystal , mineralogy , crystallography , crystal (programming language) , analytical chemistry (journal) , isotropic etching , chemistry , optics , metallurgy , doping , nanotechnology , optoelectronics , physics , scintillator , programming language , layer (electronics) , chromatography , detector , computer science
The three component mixture of HCl: HNO 3 : CH 3 COOH in the volumetric proportion of 3: 1: 4 was found to be a satisfactory etchant for various surfaces of Bi 4 Ge 3 O 12 . The correlation between etch pits and dislocations was established by means of repeated etching and optical observations.