Premium
Estimation of point defect parameters of solids on the basis of a defect formation model of melting (III). Formation entropy and concentration of schottky defects (vacancies)
Author(s) -
Uvarov N. F.,
Bollmann W.,
Hairetdinov E. F.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240511
Subject(s) - vacancy defect , melting point , crystallographic defect , schottky defect , ion , fusion , schottky diode , thermodynamics , materials science , entropy (arrow of time) , chemistry , crystallography , physics , linguistics , philosophy , optoelectronics , organic chemistry , diode , composite material
The formation entropy of Schottky defects (vacancies) is calculated from the entropy of fusion and the concentration x L = 0.125 of vacancies within the melt at melting point T m . The formation of vacancies is connected with a decrease of the vibrational frequency of those lattice forming particles (atoms, ions, molecules) being neighbours of the vacancies. Theoretical values of the vacancy concentrations x s agree with those x s obtained with the help of experimentally determined free formation enthalpies of the defects.