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The transition layers in AlGaAs/GaAs and InGaAsP/GaAs heterostructures grown by LPE
Author(s) -
Bolkhovityanov Yu. B.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240502
Subject(s) - heterojunction , epitaxy , auger , materials science , optoelectronics , gallium arsenide , nanotechnology , layer (electronics) , atomic physics , physics
AlGaAs/GaAs and InGaAsP/GaAs heterostructues were grown by liquid phase epitaxy ( T o = 800–770 °C), the transition layers (TLs) were measured with Auger profiling. The Auger profiling of the InGaAsP/GaAs heterostructures after a long heating (1–6 hours, 770 °C) has been made too. The analysis of the experimental data led to the conclusion that the fundamental values of the TL in above mentioned systems are about 10 and 1 to 2 nm, correspondingly. This difference between the minimum widths of the TL in AlGaAs/GaAs and InGaAsP/GaAs system is connected with the different speed of solid state diffusional processes which occur at the initial stpeps of liquid – solid contact.