The transition layers in AlGaAs/GaAs and InGaAsP/GaAs heterostructures grown by LPE

AlGaAs/GaAs and InGaAsP/GaAs heterostructues were grown by liquid phase epitaxy ( T o = 800–770 °C), the transition layers (TLs) were measured with Auger profiling. The Auger profiling of the InGaAsP/GaAs heterostructures after a long heating (1–6 hours, 770 °C) has been made too. The analysis of the experimental data led to the conclusion that the fundamental values of the TL in above mentioned systems are about 10 and 1 to 2 nm, correspondingly. This difference between the minimum widths of the TL in AlGaAs/GaAs and InGaAsP/GaAs system is connected with the different speed of solid state diffusional processes which occur at the initial stpeps of liquid – solid contact.