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Properties of Ni/p–InTe Schottky barrier
Author(s) -
Rousina Roughieh,
Shivakumar G. K.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240428
Subject(s) - schottky diode , indium , schottky barrier , capacitance , metal–semiconductor junction , materials science , nickel , evaporation , diffusion capacitance , telluride , optoelectronics , diode , voltage , chemistry , electrical engineering , metallurgy , thermodynamics , physics , electrode , engineering
Nickel–indium telluride schottky barriers have been prepared by sequential evaporation, and their electrical characteristics have been studied. Various diode parameters have been obtained through current‐voltage and capacitance‐voltage characteristics. An equilibrium energy level diagram for the Ni/p–InTe system has been constructed using the experimental results.