Oxide‐free etching of (100) InP surfaces | Zendy

Knauer A. | Zendy; Hirsch D. | Zendy; Staske R. | Zendy; Zeimer U. | Zendy

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Oxide‐free etching of (100) InP surfaces

Author(s) -

Knauer A.,

Hirsch D.,

Staske R.,

Zeimer U.

Publication year - 1989

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170240422

Subject(s) - etching (microfabrication) , oxide , isotropic etching , materials science , methanol , nanotechnology , chemistry , chemical engineering , mineralogy , metallurgy , organic chemistry , layer (electronics) , engineering

We report several combinations of chemical preparation procedures for selective cleaning of InP (100) surfaces in connection with storage procedures. A complex of analytical methods was used to get information about the surface state, the morphology, and the perfection of the surface. Using a standard etch procedure developed by K URTH et al. a post‐deoxidation by small concentrated HF or HNO 3 is sufficient to get oxide‐free, clean InP (100) surfaces even after a storage in methanol for some hours.

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