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Oxide‐free etching of (100) InP surfaces
Author(s) -
Knauer A.,
Hirsch D.,
Staske R.,
Zeimer U.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240422
Subject(s) - etching (microfabrication) , oxide , isotropic etching , materials science , methanol , nanotechnology , chemistry , chemical engineering , mineralogy , metallurgy , organic chemistry , layer (electronics) , engineering
Abstract We report several combinations of chemical preparation procedures for selective cleaning of InP (100) surfaces in connection with storage procedures. A complex of analytical methods was used to get information about the surface state, the morphology, and the perfection of the surface. Using a standard etch procedure developed by K URTH et al. a post‐deoxidation by small concentrated HF or HNO 3 is sufficient to get oxide‐free, clean InP (100) surfaces even after a storage in methanol for some hours.