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Dynamics of structural defects of LPE‐grown Ga x ‐In 1− x P Layers
Author(s) -
Popov A.,
Dardjonov St.,
Bahnev A.,
Petrov Sr.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240415
Subject(s) - epitaxy , crystallography , group (periodic table) , materials science , saturation (graph theory) , lattice (music) , substrate (aquarium) , crystal structure , surface structure , condensed matter physics , chemistry , composite material , layer (electronics) , physics , geology , mathematics , combinatorics , oceanography , organic chemistry , acoustics
The structural properties of epitaxial Ga x In 1− x P, LPE‐grown on 〈111〉‐oriented GaAs‐substrate, have been investigated. Two groups of samples have been distinguished with respect to the lattice parameters of the layers ( a 1 ) and the substrate ( a s ): group A with a 1 < a s and Δ a / a s = (0.85 ÷ 2.98)%, and group B with a 1 > a s and Δ a / a s = (0.11 ÷ 1.98)%. Group A is characterized by a structure, including orthogonal, and slanted at 60° towards the surface, linear dislocations, originating from mismatch ones. Group B is characterized by a segmented‐surface structure. The optimum conditions for the growth of GaInP layers on GaAs substrates (initial temperature, saturation and composition of the melt, as well as cooling rate) are discussed on the basis of the data obtained.