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The current understanding of epitaxial CVD silicon layer doping in the light of modeling and theory development (VIII)
Author(s) -
Kühne H.,
Schröder K.W.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240311
Subject(s) - susceptor , wafer , dopant , epitaxy , doping , layer (electronics) , chemistry , silicon , chemical vapor deposition , materials science , partial pressure , optoelectronics , analytical chemistry (journal) , nanotechnology , environmental chemistry , oxygen , organic chemistry
Lateral autodoping along the susceptor in downstream gas direction is described to be the result of a parasitic dopant partial pressure in the gas. Parasitic dopant species are distributed from buried layer surface into the gas during the predeposition period of the epitaxy process. They are diluted as well as gathered by the gas stream along the susceptor. The parasitic dopant pressure profile along the susceptor that exists when layer deposition begins, has been modelled by deriving an exponential expression taking into account a tilted flat susceptor having constant temperature, an increase of gas temperature along the susceptor, total gas throughput, total pressure, buried layer doping level, and the ratio of buried layer area per wafer to the susceptor area related to a wafer.