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Crystal growth and dislocation structure of gallium antimonide
Author(s) -
Moravec F.,
Šestáková V.,
Štěpánek B.,
Charvát V.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240307
Subject(s) - gallium antimonide , dislocation , etch pit density , materials science , czochralski method , crystallography , crystal (programming language) , crystal growth , antimonide , isotropic etching , gallium , etching (microfabrication) , chemistry , optoelectronics , nanotechnology , metallurgy , superlattice , layer (electronics) , computer science , programming language
Single crystals of GaSb have been grown by the Czochralski method under reducing conditions. Crystals were grown in the 〈100〉, 〈111〉, and 〈112〉 directions. The 〈111〉 growth direction was found to be the most suitable for the successful and reliable crystal growth. Dislocation densities in 〈111〉 oriented crystals were examined by chemical etching. The etch pits density in these crystals didn't exceed the value of 1 × 10 2 cm −2 .