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Liquid phase epitaxial growth of undoped gallium arsenide from bismuth and gallium melts
Author(s) -
Yakusheva N. A.,
Zhuravlev K. S.,
Chikichev S. I.,
Shegaj O. A.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240221
Subject(s) - gallium arsenide , impurity , gallium , epitaxy , materials science , bismuth , photoluminescence , analytical chemistry (journal) , hall effect , electron mobility , magnetic semiconductor , semiconductor , optoelectronics , chemistry , electrical resistivity and conductivity , nanotechnology , metallurgy , organic chemistry , engineering , layer (electronics) , chromatography , electrical engineering
Electrical properties of undoped GaAs layers grown from Ga and Bi melts under identical conditions are compared as a function of growth temperature and pregrowth baking time. Identification of residual shallow donors and acceptors is performed by means of laser photoelectrical magnetic spectroscopy and low temperature photoluminescence. It is shown that a change of solvent metal results in complete alteration of major background impurities in grown epilayers due, mainly, to changes of distribution coefficients of these impurities. High purity, low compensation n‐GaAs layers can be grown from Bi melt (epilayers with the Hall mobility of electrons μ77 K ≈ 150000 cm 2 /V · sat n = 2.5 · 10 14 cm −3 has been grown).