Premium
On the investigation of dopant boundaries in silicon device structures by means of SEM‐EBIC
Author(s) -
Hoppe W.,
Kittler M.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240114
Subject(s) - dopant , microelectronics , electron beam induced current , silicon , materials science , optoelectronics , transistor , engineering physics , dopant activation , nanotechnology , doping , electrical engineering , physics , engineering , voltage
The capabilities to study the geometrical construction of silicon devices by the technique of the electron beam induced current (EBIC) are reviewed with particular emphasis to the 2‐dimensional determination of dopant boundaries (p‐n junctions) including a discussion of demands for such investigations from a microelectronic point of view. The investigations of buried layers and MOS short‐channel transistors are outlined. As a substantial topic the preparation of electrically stable surfaces at cleaved samples is discussed and an example of the possibility of cross‐sectional analysis for junction delination is briefly given.