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Organometallic vapour phase epitaxy of galliumarsenide using Ga(CH 3 ) 3 · N(CH 3 ) 3 ‐adduct as precursor
Author(s) -
Seifert W.,
Ploska K.,
Schwetlick S.,
Butter E.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240106
Subject(s) - trimethylgallium , epitaxy , metalorganic vapour phase epitaxy , adduct , group 2 organometallic chemistry , analytical chemistry (journal) , chemistry , nitrogen , materials science , phase (matter) , inorganic chemistry , crystallography , organic chemistry , molecule , layer (electronics)
Epitaxial layers of GaAs have been grown by MOVPE using trimethylgallium‐trimethylamin‐adduct (TMGa‐TMN) as the Ga‐precursor. In comparison to the growth system using pure TMGa no significant influence on growth conditions and materials parameters could be found. The deposited GaAs is of fairly high quality with room temperature mobilities of 6700 cm 2 /Vs at free electron concentrations of about 1 × 10 15 cm −3 . No hints to nitrogen incorporation could be found.