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The current understanding of epitaxial CVD silicon layer doping in the light of modeling and theory development (VII)
Author(s) -
Kühne H.,
Schröder K.W.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240105
Subject(s) - dopant , layer (electronics) , doping , mechanism (biology) , current (fluid) , materials science , silicon , optoelectronics , chemistry , nanotechnology , thermodynamics , physics , quantum mechanics
Extension and maximum concentration of autodoping profile are discussed for both lateral and vertical autodoping phenomena and, additionally, bearing in mind the typical course of autodoping profile as obtainable by spreading resistance technique, on the background of previously published theoretical concepts of dopant incorporation. It is shown that the “improved” (three‐step mechanism) as well as the “consequent” dopant incorporation concepts (two‐step mechanism) are suited for theoretically explaining autodoping phenomena. If no additional supposition will be stated, however, it is a consequence of the former that the concentration maximum in the profile of vertical autodoping equals the buried‐layer surface dopant concentration in agreement with non‐steady state layer doping behaviour after dopant source flow has been immediately interrupted. In the contrary the latter conception simply identifies lateral and vertical autodoping effect since autodoping above as well as beyond buried layer is controlled in the same way by parasitie dopant partial pressure in the gas.