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Equilibrium dopant incorporation in CVD silicon epitaxy
Author(s) -
Kühne H.,
Morgenstern Th.
Publication year - 1989
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170240103
Subject(s) - dopant , arsine , epitaxy , silicon , growth rate , doping , layer (electronics) , partial pressure , materials science , chemistry , thermodynamics , nanotechnology , optoelectronics , physics , organic chemistry , mathematics , catalysis , geometry , oxygen , phosphine
In‐situ doping of epitaxial silicon layer with arsenic is controlled either by means of a mixed equilibrium – kinetical mechanism characterised by the influence of layer growth rate, or by means of a pure equilibrium‐related mechanism showing no layer growth rate effect. Layer growth rate can be selected to mark the transition from one mode to the other by introducing a characteristic rate v epi * . Equilibrium controls dopant incorporation when v epi 〈 v epi *〉 0 is ture. That critical rate depends on temperatur as well as on input partial pressure of arsine and can be expressed by the three different empirical quantities A, B , and E . The former two of them are defined by conventional dopant incorporation theory. The additional quantity E is a function of arsine input pressure. That function not only defines an upper limit E = E ∞ but also a lower limit E = 0 at which v epi * = 0 is valid.