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Bulk non‐radiative recombination reduction in nGaAs due to an annealing under Ga‐Al melt
Author(s) -
Andreev V. M.,
Salieva O. K.,
Solov'ev V. A.,
Sulima O. V.,
Khammedov A. M.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170231221
Subject(s) - annealing (glass) , photocurrent , radiative transfer , recombination , materials science , radiation , irradiation , analytical chemistry (journal) , optoelectronics , chemistry , optics , physics , composite material , biochemistry , gene , chromatography , nuclear physics
It is shown by microcathodoluminescence and electron beam induced current investigations that efficiency of radiative recombination and the values of hole diffusion lengths in nGaAs substrate increase (up to L p ∽ 5 μm) due to an annealing under GaAl melt. The values of the annealing critical temperature exceeding of which leeds to bulk non‐radiative recombination drop as well as optimal values of annealing temperature and duration are determined. In pAlGaAs–(p‐n)GaAs solar cells based on annealed substrates the values of open circuit voltage U oc = 1.16 – 1.18 V under 500‐fold concentrated solar radiation as well as values of photocurrent comparable with the best results of solar cells with epitaxial nGaAs are achieved.