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Optical absorption spectra of epitaxial layer ‐ gradient layer ‐ substrate systems
Author(s) -
Neumann H.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170231220
Subject(s) - epitaxy , layer (electronics) , substrate (aquarium) , absorption (acoustics) , attenuation coefficient , spectral line , band gap , materials science , photon energy , energy (signal processing) , absorption spectroscopy , optoelectronics , molecular physics , optics , chemistry , analytical chemistry (journal) , photon , physics , nanotechnology , composite material , oceanography , quantum mechanics , chromatography , geology , astronomy
Theoretical relations are derived for the photon energy dependence of the absorption coefficient of epitaxial layer — gradient layer — substrate systems assuming a spatially linear variation of the gap energy in the gradient layer. It is shown that optical absorption measurements on such systems can be used to determine the gap energy of the epitaxial layer. Numerical calculations for the system GaAs 0.3 P 0.7 —GaAs 1— x P x —GaP are presented.