Premium
Photoconductivity decay and calculation of lifetime in ZnTe
Author(s) -
Nagabhooshanam M.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170231033
Subject(s) - photoconductivity , isothermal process , vacancy defect , materials science , activation energy , atomic physics , analytical chemistry (journal) , chemistry , optoelectronics , thermodynamics , physics , crystallography , chromatography
Isothermal photoconductive decay in p‐ZnTe was used to determine the energy levels associated with the native defect acceptors as 0.024, 0.017, and 0.011 eV. The capture cross‐section and carrier lifetime were computed at different temperatures (77–200 K) by conjuncting these results with some theoretical equations. The results were explained on the basis of Zn vacancies and vacancy complexes.