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Influence of impurity band conduction on the electrical characteristics of p‐type GaAs
Author(s) -
Neumann H.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170231032
Subject(s) - impurity , acceptor , thermal conduction , hall effect , conduction band , valence band , materials science , condensed matter physics , valence (chemistry) , atmospheric temperature range , electron mobility , electrical resistivity and conductivity , semimetal , chemistry , band gap , electron , optoelectronics , thermodynamics , physics , organic chemistry , quantum mechanics , composite material
The contribution of impurity band conduction to the Hall coefficient and mobility is estimated for p‐type GaAs using existing experimental data for the hole mobility in the valence band and in acceptor impurity bands. It is found that impurity band conduction affects the measured electrical characteristics in the standard temperature range from 77 to 300 K usually used in materials characterization, if the acceptor concentration is above about 5 · 10 17 cm −3 .