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Process control of lateral autodoping in silicon epitaxy by measuring the sheet resistance
Author(s) -
Kühne H.,
Barth R.,
Malze W.,
Königsdörfer H.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170231022
Subject(s) - wafer , substrate (aquarium) , sheet resistance , materials science , layer (electronics) , epitaxy , optoelectronics , silicon , composite material , geology , oceanography
A particular test structure is presented the design of which has been based on several buried layers formed as circular rings with a suitably selected distance from each other. In an environment (concerning both substrate wafer and epitaxy layer) having an opposite type of (but low enough) conductivity with respect to buried layer, lateral autodoping will reveal a conducting channel between adjacent buried layers the sheet resistance of which can simply be measured. — It is shown that all those known effects influencing lateral autodoping as for instance buried layer doping level and substrate prebake can be revealed by sheet resistance measurement of the ring‐shaped test structure, which additionally can be applied to wafer mapping of lateral autodoping.