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Reflectivity measurements of thin SiO 2 layers in the soft‐X‐ray region
Author(s) -
Klinkenberg E.D.,
Illinsky P. P.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230926
Subject(s) - x ray reflectivity , materials science , synchrotron radiation , surface finish , thin film , reflectivity , silicon , optics , polarization (electrochemistry) , deposition (geology) , synchrotron , x ray , synchrotron radiation source , diffraction , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , composite material , paleontology , physics , sediment , chromatography , biology
Energy and angular dependent reflectivity measurements of differently prepared SiO 2 layers were made in the soft X‐ray region in order to study differences in their optical and electronic behaviour caused by the technological process. The optical constants of the layers were determined by fitting the angular dependent reflectivity data with a multilayer model which takes into account the roughness of all interfaces. Detailed knowledge of the polarization level of the primary beam from the synchrotron radiation source is needed for reliable results. The energy dependent reflectivity measurements indicate that high‐pressure dry‐oxidized layers have a more perfect structure than normal dry‐oxidized layers. Independent on the deposition process the SiSiO 2 interface roughness amounts to ± 1 nm. The Si 2p ‐XANES of Si and SiO 2 were detected.