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Anisotropic plasma etching of P‐doped poly‐Si with CCl 4 /He
Author(s) -
Handke R.,
Krzikalla R.,
Lippert Gud.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230906
Subject(s) - anisotropy , etching (microfabrication) , crystallite , polycrystalline silicon , doping , plasma etching , materials science , process (computing) , analytical chemistry (journal) , optoelectronics , chemistry , computer science , nanotechnology , optics , physics , organic chemistry , metallurgy , layer (electronics) , operating system , thin film transistor
An anisotropic and very selective etch process for high P‐doped polycrystalline Si has been developed using statistical methods for experimental design and analysis. Mixtures of CCl 4 and He served as etching gas system. It is shown that only a low number of trials is needed to get good information about the process. One example is presented for the generation of a regression polynom and a computer graphic.