Anisotropic plasma etching of P‐doped poly‐Si with CCl 4 /He | Zendy

Handke R. | Zendy; Krzikalla R. | Zendy; Lippert Gud. | Zendy

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Anisotropic plasma etching of P‐doped poly‐Si with CCl 4 /He

Author(s) -

Handke R.,

Krzikalla R.,

Lippert Gud.

Publication year - 1988

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170230906

Subject(s) - anisotropy , etching (microfabrication) , crystallite , polycrystalline silicon , doping , plasma etching , materials science , process (computing) , analytical chemistry (journal) , optoelectronics , chemistry , computer science , nanotechnology , optics , physics , organic chemistry , metallurgy , layer (electronics) , operating system , thin film transistor

An anisotropic and very selective etch process for high P‐doped polycrystalline Si has been developed using statistical methods for experimental design and analysis. Mixtures of CCl 4 and He served as etching gas system. It is shown that only a low number of trials is needed to get good information about the process. One example is presented for the generation of a regression polynom and a computer graphic.

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