Premium
TEM studies of medium‐doses Kr + ‐implanted silicon
Author(s) -
Morawiec J.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230809
Subject(s) - transmission electron microscopy , wafer , annealing (glass) , silicon , amorphous solid , materials science , dislocation , ion , crystallography , ion implantation , electron microscope , analytical chemistry (journal) , chemistry , nanotechnology , composite material , optoelectronics , optics , physics , organic chemistry , chromatography
〈100〉 silicon wafers implanted with 300 ke V Kr + ions to the following 5 × 10 13 , 1 × 10 14 and 5 × 10 14 cm −2 doses were investigated by means of conventional and high voltage transmission electron microscopes. Planar‐view technique was applied to characterize primary damage and to determine the geometry and the nature of secondary defects left after the furnace annealing. It is concluded that implantation to the lowest and highest doses, respectively, leads to incomplete and complete amorphicity of entire bombarded region, whereas the intermediate dose forms a burried amorphous layer. Small interstitial Frank dislocation loops on {111} planes are the predominant secondary defects for the range of doses. Occurrence of additional rod‐like defects is related to the regions of discontinuous initial amorphicity.