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On the structure of thin plasma‐treated thermal SiO 2 films
Author(s) -
Popova L. I.,
Atanassova E. D.,
Peneva S. K.,
Tcukeva E. A.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230806
Subject(s) - microcrystalline , electron diffraction , plasma , materials science , reflection high energy electron diffraction , thin film , amorphous solid , oxygen , thermal decomposition , decomposition , diffraction , chemistry , crystallography , optics , nanotechnology , physics , organic chemistry , quantum mechanics
Oxygen‐plasma‐treated thin thermal SiO 2 films (15–100 nm) have been studied by Reflection High Energy Electron Diffraction (RHEED). The presence of unconventional type microcrystalline regions (not only tetrahedrally coordinated) in the amorphous matrix of the oxides is established. Thinner oxides (15–50 nm) are more sensitive to the plasma action. In general, oxygen plasma leads to an additional deformation and decomposition of the initial crystalline forms and causes a degradation of the electrical parameters of the samples.