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Numerical modelling of heat transfer in GaSb Czochralski crystal growth (CZ and LEC)
Author(s) -
Böttcher K.,
Krüger A.,
Schleusener B.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230621
Subject(s) - crucible (geodemography) , micro pulling down , crystal (programming language) , heat transfer , materials science , crystal growth , czochralski method , boundary value problem , boundary (topology) , mechanics , thermodynamics , crystallography , chemistry , physics , computer science , mathematical analysis , computational chemistry , mathematics , quantum mechanics , programming language
By the hand of a system‐oriented steady‐state model of the GaSb crystal growth (CZ and LEC) the crystal‐melt interface, the heat losses due to cooling, and the required crucible temperatures are calculated as a response to the boundary conditions for temperature and heat flows, and to the chosen geometry. Of special interest is a phantom of an after‐heater influencing the cooling of the crystal.