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GaPAl x Ga 1− x P heterostructure edge coupling waveguides for hybrid integrated optic devices
Author(s) -
Díaz P.,
Gonzalez C.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230605
Subject(s) - heterojunction , materials science , etching (microfabrication) , optoelectronics , waveguide , laser , substrate (aquarium) , double heterostructure , optics , epitaxy , semiconductor , semiconductor laser theory , refractive index , layer (electronics) , nanotechnology , physics , oceanography , geology
In this paper we present the performance of GaPAl x Ga 1− x P heterostructure waveguides for integrated optic hybrid devices. The waveguide layer is graded with a parabolic refractive index profile for the light emission of a DHGaAs semiconductor laser. The waveguide heterostructure performed allows to couple at it edge crossection semiconductor laser or photodetector as well as fix or solder them on the same substrate on which the heterostructure layers were deposited. The heterostructure layers were grown by liquid phase epitaxy and the heterostructure waveguide was performed by means of etching technics specially developed for this purpose. Both, the growth procedure, as well as the etching technics are described. The results achieved are shown in curves and photographs, taken on a scanning microscope.