Characterization of plasma etching of molybdenum polycid conductor stacks in Cl 2 /CF 4  and Cl 2 /CF 4 /O 2 | Zendy

Handke R. | Zendy; Lippert G. | Zendy

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Characterization of plasma etching of molybdenum polycid conductor stacks in Cl 2 /CF 4 and Cl 2 /CF 4 /O 2

Author(s) -

Handke R.,

Lippert G.

Publication year - 1988

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170230525

Subject(s) - etching (microfabrication) , molybdenum , characterization (materials science) , doping , analytical chemistry (journal) , chemistry , conductor , materials science , crystallography , inorganic chemistry , nanotechnology , optoelectronics , composite material , layer (electronics) , chromatography

The present paper is concerned with an extremly anisotropic two‐step patterning process for Mo2Si/poly‐Si double layers with an etch‐stop on thick P‐doped CVD‐SiO 2 . As etching gas Cl 2 /CF 4 /O 2 and Cl 2 /CF 4 are used. By means of etch rate dependencies, volatilities of possible reaction products and results, obtained from the literature it is attempted to develop a simple qualitative model on the chemism of the process.

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