Premium
Metalorganic chemical vapour deposition of oriented ZnO films
Author(s) -
Kaufmann Th.,
Fuchs E.,
Webert M.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230511
Subject(s) - metalorganic vapour phase epitaxy , sapphire , chemical vapor deposition , epitaxy , electrical resistivity and conductivity , materials science , thin film , atmospheric pressure , chemical engineering , deposition (geology) , analytical chemistry (journal) , mineralogy , chemistry , optoelectronics , nanotechnology , optics , organic chemistry , laser , layer (electronics) , physics , electrical engineering , engineering , paleontology , oceanography , sediment , geology , biology
Thin uniform films of ZnO could be obtained by MOCVD using Zn(CH 3 ) 2 ‐THF adduct and H 2 O as reactants. The film growth was carried out at atmospheric pressure. A vertical resistance‐heated cold‐wall reactor system was used. Highly c ‐axis oriented ZnO films being very smooth and having a low resistivity were grown on (100)Si and (100)Si/SiO 2 under certain conditions. Epitaxial growth could be achieved on (1 1 02)‐sapphire. The dependence of the properties of the films on the growth conditions was investigated.