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Thermally activated de‐excitation of the EL2 metastable state in GaAs
Author(s) -
Trautman P.,
Kamińska M.,
Baranowski J. M.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230324
Subject(s) - metastability , excitation , absorption (acoustics) , chemistry , atomic physics , electron , crystal (programming language) , analytical chemistry (journal) , free electron model , helium , materials science , optics , physics , organic chemistry , chromatography , quantum mechanics , computer science , programming language
Measurements of absorption in the near infrared have been performed on n‐type and undoped semi‐insulating GaAs containing EL2 the main native defect in GaAs. The whole band of absorption related to EL2 disappeared after 1 μm light illumination when the crystal was cooled to helium temperatures. Measurements of the thermally activated recovery of EL2 absorption have been made. The rate of the de‐excitation is well described by the formula: r = 1.7 · 10 12 · exp (−0.36 eV/ kT ) + 1.6 · 10 −9 · n · exp (−0.085 eV/ kT ) s −1 where n [cm −3 ] is the concentration of free electrons.