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Positron lifetime measurements in as‐grown and electron irradiated InSb
Author(s) -
Sen Gupta A.,
Moser P.,
Corbel C.,
Hautojärvi P.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230323
Subject(s) - irradiation , positron , annealing (glass) , electron , vacancy defect , electron beam processing , materials science , atomic physics , radiochemistry , nuclear physics , crystallography , chemistry , physics , composite material
Positron lifetime in an as‐grown InSb crystal is measured to be 282 ± 2 ps. Irradiation by 3 MeV electrons at 20 K to the dose 4 × 10 18 e − /cm 2 increases the lifetime by 8 ps. The irradiation‐induced vacancy‐defects recover until 350 K with a sharper annealing stage at 250 K–350 K.