Premium
Positron lifetime measurements in as‐grown and electron irradiated InSb
Author(s) -
Sen Gupta A.,
Moser P.,
Corbel C.,
Hautojärvi P.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230323
Subject(s) - irradiation , positron , annealing (glass) , electron , vacancy defect , electron beam processing , materials science , atomic physics , radiochemistry , nuclear physics , crystallography , chemistry , physics , composite material
Positron lifetime in an as‐grown InSb crystal is measured to be 282 ± 2 ps. Irradiation by 3 MeV electrons at 20 K to the dose 4 × 10 18 e − /cm 2 increases the lifetime by 8 ps. The irradiation‐induced vacancy‐defects recover until 350 K with a sharper annealing stage at 250 K–350 K.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom