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Positron annihilation in GaAs
Author(s) -
Misheva M.,
Mishev P.,
Pasajov G.,
Toumbev G.,
Yakimova R.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230322
Subject(s) - positronium , positron annihilation , annihilation , positron , materials science , doping , atomic physics , physics , nuclear physics , condensed matter physics , electron
Abstract Positron lifetimes and three‐gamma annihilation in In, Cr, Te, and Sn doped GaAs have been measured. The mean τ m and the bulk τ b lifetimes in SI crystals are approximately 10 ps shorter than in n‐type crystals. Three‐gamma annihilation shows positronium formation in Bridgman grown samples only.