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X‐ray diffraction studies of interdiffusion in InAs—GaAs powder blends
Author(s) -
Černý R.,
Valvoda V.,
Voland U.,
Deus P.,
John M.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230316
Subject(s) - vacancy defect , materials science , diffraction , diffusion , radius , powder diffraction , crystallography , activation energy , spheres , atomic radius , analytical chemistry (journal) , chemistry , thermodynamics , optics , physics , computer security , chromatography , computer science , astronomy , organic chemistry
Interdiffusion in the pseudobinary system In x Ga 1− x As is investigated by means of X‐ray diffractometry of annealed powder blends. The interpretation of the experimental results by means both of the concentric spheres and concentric cubes model yields for In 0.43 Ga 0.57 As an activation energy of (5.39 ± 0.11) eV. This value shows that the diffusion mechanism could be a vacancy one as in the pure compounds. According to the lower atomic radius the Ga atoms within the temperature interval of 550–625 °C diffuse more easily than the In atoms.