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Electrical properties of GaAs induced by the metastability of EL2 defect
Author(s) -
Walczak J. P.,
Kaminska M.,
Baranowski J. M.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230226
Subject(s) - metastability , photocurrent , materials science , photoconductivity , current (fluid) , condensed matter physics , optoelectronics , chemistry , thermodynamics , physics , organic chemistry
Metastable properties of EL2 defect in undoped semiinsulating GaAs have been studied using photocurrent and thermally stimulated current techniques (TSC). The experimental data suggest that light induced defect reaction takes place when EL2 is transferred to its metastable state.