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Vacancy defects in as‐grown and nº‐irradiated GaP and GaAs 1− x P x Studied by Positrons
Author(s) -
Dlubek G.,
Brümmer O.,
Polity A.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230225
Subject(s) - vacancy defect , irradiation , materials science , stoichiometry , positron , annihilation , positron annihilation , band gap , neutron , analytical chemistry (journal) , crystallography , atomic physics , chemistry , physics , optoelectronics , nuclear physics , electron , chromatography
Abstract Measurements of positron lifetime τ and of the shape parameter S of the Doppler‐broadened annihilation line are used to study bulk and defect properties in GaP and GaAs 1− x P x . τ and S decrease linearly with the composition x of GaAs 1− x P x layers. A second lifetime component (τ 2 = 290 ps) observed in as‐grown GaP is attributed to stoichiometric P vacancies. After neutron irradiation of GaP and GaAs 0.13 P 0.87 positrons are trapped by Ga vacancies (τ 2 = 250 ps). These vacancies anneal out in two stages at 200–550 °C and 550–800 °C.