Vacancy defects in as‐grown and nº‐irradiated GaP and GaAs 1− x  P  x   Studied by Positrons | Zendy

Dlubek G. | Zendy; Brümmer O. | Zendy; Polity A. | Zendy

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Vacancy defects in as‐grown and nº‐irradiated GaP and GaAs 1− x P x Studied by Positrons

Author(s) -

Dlubek G.,

Brümmer O.,

Polity A.

Publication year - 1988

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170230225

Subject(s) - vacancy defect , irradiation , materials science , stoichiometry , positron , annihilation , positron annihilation , band gap , neutron , analytical chemistry (journal) , crystallography , atomic physics , chemistry , physics , optoelectronics , nuclear physics , electron , chromatography

Measurements of positron lifetime τ and of the shape parameter S of the Doppler‐broadened annihilation line are used to study bulk and defect properties in GaP and GaAs 1− x P x . τ and S decrease linearly with the composition x of GaAs 1− x P x layers. A second lifetime component (τ 2 = 290 ps) observed in as‐grown GaP is attributed to stoichiometric P vacancies. After neutron irradiation of GaP and GaAs 0.13 P 0.87 positrons are trapped by Ga vacancies (τ 2 = 250 ps). These vacancies anneal out in two stages at 200–550 °C and 550–800 °C.

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