Annealing of electron irradiated GaP studied by positron lifetime technique | Zendy

Sen Gupta A. | Zendy; Moser P. | Zendy; Corbel C. | Zendy; Hautojärvi P. | Zendy; Sen P. | Zendy

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Annealing of electron irradiated GaP studied by positron lifetime technique

Author(s) -

Sen Gupta A.,

Moser P.,

Corbel C.,

Hautojärvi P.,

Sen P.

Publication year - 1988

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170230223

Subject(s) - irradiation , annealing (glass) , positron , materials science , electron , electron beam processing , radiochemistry , analytical chemistry (journal) , atomic physics , chemistry , nuclear physics , physics , metallurgy , chromatography

GaP single crystals were irradiated by 3 MeV electrons at 20 K to a dose of 4 × 10 18 e/cm 2 . An isochronal annealing in temperature region 77 ÷ 650 K followed the irradiation. Positron lifetime measurement indicated the presence of irradiation‐induced vacancies in Ga sublattice. The vacancies disappeared at two stages observed at temperatures 200 ÷ 300 K and 450 ÷ 550 K.

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