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Annealing of electron irradiated GaP studied by positron lifetime technique
Author(s) -
Sen Gupta A.,
Moser P.,
Corbel C.,
Hautojärvi P.,
Sen P.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230223
Subject(s) - irradiation , annealing (glass) , positron , materials science , electron , electron beam processing , radiochemistry , analytical chemistry (journal) , atomic physics , chemistry , nuclear physics , physics , metallurgy , chromatography
GaP single crystals were irradiated by 3 MeV electrons at 20 K to a dose of 4 × 10 18 e/cm 2 . An isochronal annealing in temperature region 77 ÷ 650 K followed the irradiation. Positron lifetime measurement indicated the presence of irradiation‐induced vacancies in Ga sublattice. The vacancies disappeared at two stages observed at temperatures 200 ÷ 300 K and 450 ÷ 550 K.