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Investigation of radiation defects in electron irradiated Hg 1− x Cd x Te crystals using positron annihilation
Author(s) -
Voitsekhovskii A. V.,
Kokhanenko A. P.,
Petrov A. S.,
Lilenko Yu. V.,
Pogrebnyak A. D.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230221
Subject(s) - irradiation , vacancy defect , annealing (glass) , positron , materials science , annihilation , radiation , atomic physics , electron , crystallographic defect , positron annihilation , electron beam processing , annihilation radiation , radiation damage , molecular physics , condensed matter physics , chemistry , nuclear physics , physics , composite material
The electron characteristics of defects in the initial and electron irradiated Hg 1− x Cd x Te (2–3 MeV, 10 18 cm −2 , 300 K) crystals using the positron annihilation method have been investigated. The data of electric measurements are confirmed on connection of p‐type conductivity with vacancy defects of metal sublattice initial crystals Hg 1− x Cd x Te. An analysis of correlation curves of irradiated crystals has shown a possibility of formation of associations of initial defects and radiation damages of vacancy type during radiation process. The presence of narrow component on correlation curves in the region of small angles is associated with formation of positronium states localized in the region of radiation defect complex of vacancy type. Identification of positron‐sensitive defects with electrically active radiation induced ones has been carried out according to the results of isochronal annealing of irradiated crystals.