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Anisotropy effect of high‐momentum of ADAP in diamond‐like semiconductors
Author(s) -
Arutyunov N.,
Baltenkov A.,
Segal I.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230220
Subject(s) - germanium , anisotropy , annihilation , silicon , semiconductor , electron , single crystal , condensed matter physics , diamond , ion , crystal (programming language) , gallium arsenide , positron , chemistry , atomic physics , physics , crystallography , nuclear physics , optics , optoelectronics , programming language , organic chemistry , computer science
A high‐momentum component of angular distributions of annihilation photons (HMC ADAP) has been studied experimentally and theoretically in single crystals of germanium, silicon and gallium arsenide and in a single crystal and polycrystal silicon. The model oe the process of positron annihilation with electrons of ion cores has been suggested and the calculations of HMC ADAP curves have been performed for crystallographic directions [111], [110] and [100] of a dimond‐like lattice. It has been established that ADAP anisotropy characteristics in a single crystal of germanium are slightly dependent on the temperature in the range of Δ T = 300÷930 K. It has been concluded that HMC ADAP anisotropy is caused by annihilation of thermalizod positrons with electrons of outer shells of ion cores in crystal lattices of dimond‐like semiconductors.