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Study of the chemical reactions' influence on semiconductor films structure formation by the Monte‐Carlo method
Author(s) -
Aleksandrov L. N.,
Kogan A. N.,
Bochkova R. V.,
Tikhonova N. P.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230202
Subject(s) - silicon , epitaxy , adsorption , monte carlo method , growth rate , chemistry , layer (electronics) , crystal growth , surface roughness , semiconductor , molecule , materials science , crystallography , analytical chemistry (journal) , chemical physics , chemical engineering , nanotechnology , organic chemistry , composite material , optoelectronics , engineering , statistics , mathematics , geometry
Abstract The investigation by the Monte‐Carlo method of the growth of the silicon epitaxial film at a chloride CVD system has allowed to find out the composition of adsorption layer, the micromechanism of the reactions of Si atoms building‐in into the growing crystalline layer and the growth conditions influence on the growth rate and film surface roughness. The change of adsorptive layer composition in the system SiCl 4 —HCl—H 2 (fraction of adaatoms, silicon atoms built‐in a crystal and molecules SiCl 2 ) depending on temperature has been determined. The change of silicon film growth rate depending on temperature and concentration change of SiH 2 Cl 2 has been established and the contribution of growth mechanism (with participation of adatom, silicon atoms and molecules SiCl 2 ) into the total rate of film growth has been shown.