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Nonstoichiometry and point defects in PbTe
Author(s) -
Schenk M.,
Berger H.,
Klimakow A.,
Mühlberg M.,
Wienecke M.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230111
Subject(s) - positron annihilation , crystallographic defect , annihilation , materials science , condensed matter physics , lattice (music) , charge carrier density , positron , chemical physics , chemistry , physics , nuclear physics , doping , electron , acoustics
The nostoichiometry and point‐defect structure of PbTe was investigated by various methods including carrier‐concentration, lattice‐constant, positron‐annihilation and vapour‐density measurements. The results are discussed in comparison with data published by other authors. New aspects are obtained especially from high‐temperature experiments. A model of nonstoichiometry and defect structure in PbTe is proposed. The stability region of PbTe is essentially broader than reported until now. The disorder takes place mainly in the Pb sublattice, i.e., there occur charged Pb vacancies (Te‐rich) and Pb interstitials (Pb‐rich), respectively, as well as probably additional neutral Pb interstitials in Pb‐rich PbTe.