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Slip band formation during bending of gap wafers
Author(s) -
Jurkschat K.,
Wagner G.,
Paufler P.
Publication year - 1988
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170230107
Subject(s) - slip (aerodynamics) , wafer , materials science , lüders band , composite material , shear (geology) , shear stress , scanning electron microscope , band gap , slip line field , band bending , optics , crystallography , condensed matter physics , optoelectronics , chemistry , microstructure , physics , thermodynamics
{001} LEC‐GaP:S wafers were deformed between 470 °C and 640 °C. {111} slip planes of maximum resolved shear stress were activated. Heights and densities of slip steps have been measured by optical and electron microscopy. At lower temperatures deformation proceeds mainly by growth of step heights whereas at higher temperatures bending is accomplished by the increase of slip band density rather than of height.