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Depth profile of the microhardness in helium implanted GaP
Author(s) -
Ascheron C.,
Neumann H.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170221211
Subject(s) - indentation hardness , helium , materials science , hardening (computing) , ion , ion implantation , composite material , molecular physics , atomic physics , chemistry , microstructure , physics , layer (electronics) , organic chemistry
Depth profiles of the damage density and the microhardness are measured in GaP single crystals implanted with 1 MeV helium ions. From an analysis of the experimental data it follows that the microhardness increases up to a damage density of about 16% due to point defect hardening. At higher damage densities the microhardness decreases rapidly, probably due to the formation of extended defects.