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On the deposition mechanism of boron in silicon CVD epitaxy
Author(s) -
Kühne H.,
Malze W.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170221202
Subject(s) - epitaxy , boron , silicon , dopant , doping , materials science , deposition (geology) , layer (electronics) , hydrogen , analytical chemistry (journal) , chemistry , nanotechnology , optoelectronics , geology , paleontology , organic chemistry , chromatography , sediment
The deposition mechanism of boron doping in CVD silicon epitaxy has been investigated by exposing silicon substrates to B 2 H 6 H 2 doping gas mixtures at epitaxy temperatures and examining the effect by dopant profile measuring in an afterwards intrinsically in‐situ deposited epitaxial silicon layer. It has been shown that boron is deposited increasing its concentration on the surface linearly with prolonged exposition time and desorbed by purging the surface in pure hydrogen. In the latter case its content decreases linearly proportional to the predeposited concentration. The desorbed boron builds up a secondary doping source which maintains a parasitic boron flow for reincorporation during following layer growth.