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Annealing study of He‐irradiated Ni samples
Author(s) -
Lemahieu I.,
Segers D.,
Deschepper L.,
DorikensVanpraet L.,
Dorikens M.,
Stals L.,
Mommaert C.,
Severne G.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170221129
Subject(s) - vacancy defect , annealing (glass) , irradiation , helium , materials science , ion , positron annihilation , annihilation , analytical chemistry (journal) , positron , radiochemistry , atomic physics , nuclear chemistry , crystallography , chemistry , nuclear physics , metallurgy , physics , electron , chromatography , organic chemistry
Positron annihilation lifetime measurements were performed in helium‐irradiated Ni foils for annealing temperatures between 300 K and 1400 K. The samples were also examined by T.E.M. It is shown that immediately after the irradiations two kinds of vacancy clusters are present, some of them containing He‐ions and the others being empty. The empty vacancy clusters anneal out before 800 K, while the vacancy clusters containing He grow in size as a function of annealing temperature.