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Sputter depth profiling of GaAlAs double heterostructures using auger electron spectroscopy
Author(s) -
Chassé T.,
Heichler W.,
Langhammer J.,
Zwanzig W.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170221114
Subject(s) - sputtering , auger electron spectroscopy , ion , heterojunction , scanning electron microscope , analytical chemistry (journal) , materials science , sputter deposition , electron microprobe , spectroscopy , surface roughness , chemistry , mineralogy , optoelectronics , thin film , nanotechnology , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics , composite material
Sputter depth profiles of GaAlAs double heterostructures had been taken by the help of Auger electron spectroscopy (AES). The sputtering ion beam consisted of either N + — or Ar + ions. In the case of using N + ions an essentially better depth resolution was found comparing with Ar + ions, especially in a sputter depth of some μm. Investigations of the sputter—crater using Scanning Electron Microscopy (SEM) and Electron Probe Micro Analysis (EPMA) showed, that the improved depth resolution during N 2 +ion sputtering is a result of the essential lowered sputter induced surface roughness. This should be caused by the stronger amorphisation of the target surface using N 2 +ions which is a consequence of the chemical reactions taking place at the surface with the sputtering ions.