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Electrical transport properties of CdTe:Sb films
Author(s) -
Pratap K. J.,
Nagabhushanam M.,
Balaramaiah A.,
Babu V. Hari
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170221014
Subject(s) - thermal conduction , cadmium telluride photovoltaics , materials science , hall effect , substrate (aquarium) , electron mobility , vacuum evaporation , evaporation , conductivity , condensed matter physics , grain boundary , electron , electrical resistivity and conductivity , analytical chemistry (journal) , chemistry , thin film , optoelectronics , composite material , nanotechnology , thermodynamics , physics , microstructure , oceanography , chromatography , quantum mechanics , geology
Hall coefficient and dc conductivity measurements are made on p‐type CdTe:Sb films grown by vacuum evaporation technique on glass substrate. The grain boundary potential barrier, which is found mainly to limit the mobility of carriers is calculated as a function of film thickness. The n‐type conduction is found to dominate over p‐type conduction above about 330 K. The ratio of electron to hole mobility is also calculated.