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Antistructure disorder and its relation to dislocations in III–V semiconductors
Author(s) -
Figielski T.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170221009
Subject(s) - dislocation , materials science , impurity , condensed matter physics , doping , semiconductor , crystallography , deformation (meteorology) , chemistry , optoelectronics , physics , composite material , organic chemistry
Intimate relationship between antistructure defects and dislocations occurs in GaAs which manifests itself as: (i) appearing of spatial correlation between grown‐in dislocations and the EL2 defects (component of the latter are As Ga antisites), (ii) similar suppression of the concentration of EL2 and dislocation density due to the doping with donor impurities, (iii) generation of As Ga antisites during the plastic deformation of a crystal. Al these effects can be understood in terms of the dislocation‐mediated generation of As Ga antisites via absorption of As i interstitials at dislocation jogs. Large anion (cation) precipitates appearing at dislocations are pointed out to be important for both antisite and dislocation generation under certain conditions.