Incorporation of nitrogen into galliumarsenide grown by chloride VPE

The incorporation of nitrogen into GaAs in the halide‐VPE system using NH 3 as the doping source is investigated. The concentration of incorporated N depends on the NH 3 flow rate and increases with decreasing deposition temperature. Concentrations up to 6 × 10 17 cm −3 could be detected far above the calculated equilibrium value. By a comparison of SIMS‐data with those obtained from IR it is found that most of the N‐atoms are situated substitutionally on As lattice sites. Normal‐pressure 2 K photoluminescence measurements show N‐related luminescence peaks at 1.508 and 1.496 eV. Most probably this luminescence arises from complexes of N with undeliberately introduced impurities. For the 1.508 eV center a complex Si Ga ‐N As is discussed. — A new N‐related metastable deep center with the energy levels E c ‐0.33, E c ‐0.41, and E c ‐0.68 eV could be found by DLTS.