Premium
Incorporation of nitrogen into galliumarsenide grown by chloride VPE
Author(s) -
Schwetlick S.,
Seifert W.,
Butter E.,
Hörig W.,
Pickenhain R.,
Schwabe R.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220803
Subject(s) - halide , luminescence , impurity , metastability , photoluminescence , analytical chemistry (journal) , chemistry , nitrogen , chloride , doping , inorganic chemistry , materials science , optoelectronics , organic chemistry , chromatography
The incorporation of nitrogen into GaAs in the halide‐VPE system using NH 3 as the doping source is investigated. The concentration of incorporated N depends on the NH 3 flow rate and increases with decreasing deposition temperature. Concentrations up to 6 × 10 17 cm −3 could be detected far above the calculated equilibrium value. By a comparison of SIMS‐data with those obtained from IR it is found that most of the N‐atoms are situated substitutionally on As lattice sites. Normal‐pressure 2 K photoluminescence measurements show N‐related luminescence peaks at 1.508 and 1.496 eV. Most probably this luminescence arises from complexes of N with undeliberately introduced impurities. For the 1.508 eV center a complex Si Ga ‐N As is discussed. — A new N‐related metastable deep center with the energy levels E c ‐0.33, E c ‐0.41, and E c ‐0.68 eV could be found by DLTS.