Irradiation plus annealing‐induced 1.20 eV emission band in p‐type GaAs | Zendy

Glinchuk K. D. | Zendy; Guroshev V. I. | Zendy; Prokhorovich A. V. | Zendy

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Irradiation plus annealing‐induced 1.20 eV emission band in p‐type GaAs

Author(s) -

Glinchuk K. D.,

Guroshev V. I.,

Prokhorovich A. V.

Publication year - 1987

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170220717

Subject(s) - annealing (glass) , irradiation , luminescence , tellurium , electron beam processing , electron , gallium , materials science , radiative transfer , spontaneous emission , recombination , atomic physics , analytical chemistry (journal) , chemistry , optoelectronics , physics , optics , laser , chromatography , quantum mechanics , nuclear physics , metallurgy , composite material , biochemistry , gene

The effect of 2.2 MeV electron irradiation and subsequent annealings on the luminescence of tellurium‐compensated p‐type GaAs crystals is studied and analyzed. A comparatively strong emission band peaked at hv m near 1.20 eV (induced by radiative electron recombination in Te As V Ga pairs) appears in irradiated annealed (at T ≧ 250 °C) compensated p‐type GaAs. The data obtained testify about the following: a) electron irradiation of GaAs creates stable (at T ≦ 200 °C) defects not only in the arsenic sublattice of GaAs, but in its gallium sublattice too; b) radiation plus annealing (r.p.a.)‐induced Te As V Ga pairs are characterized by a rather high (compared to that for grown‐in Te As V Ga pairs) probability of electron radiative transitions in them. The electrical characterization of the r.p. a.‐induced 1.20 eV radiative centres (Te As V Ga pairs) is given.

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