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The current understanding of epitaxial CVD silicon layer doping in the light of modelling and theory development (IV). The problem of more‐than‐one kind of dopant species
Author(s) -
Kühne H.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220705
Subject(s) - dopant , doping , epitaxy , silicon , limiting , layer (electronics) , materials science , flux (metallurgy) , nanotechnology , chemistry , engineering physics , chemical physics , optoelectronics , physics , mechanical engineering , engineering , metallurgy
In Part IV of the present treatise epitaxial silicon layer doping governed by the ratelimiting action of more than one kind of dopant species in the gas is investigated on the theoretical basis which has been derived in the previously published parts. It is shown that both the general reaction scheme of forward and backward reaction steps and the general differential equation statement of counterbalancing the fluxes of those reaction steps and the dopant incorporation flux are suitable for solving the problem under consideration. Only two of the four incorporation‐limiting reaction mechanisms, being discussed in the more recent literature, fulfill the requirements needed to agree with experimental findings on the one hand and with the limiting case situation of equilibrium incorporation on the other. Arsenic has been selected as the demonstrating dopant element.