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Morphology of SiC epitaxial layers grown by temperature gradient zone melting (II). The dependence of the structural properties of the epitaxial layers on the growth conditions
Author(s) -
Peev N. S.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220704
Subject(s) - supersaturation , epitaxy , materials science , layer (electronics) , temperature gradient , morphology (biology) , thermodynamics , degree (music) , crystallography , chemical physics , condensed matter physics , chemistry , composite material , physics , geology , paleontology , acoustics , quantum mechanics
In the present paper the relationships between the structural perfection of the layer, represented by the Tb average integral concentration (which is a criterion for the second phase quantity), the rocking curve half‐width (a criterion for the general structural perfection of the layer) and the layer growth conditions, represented by the quantity, which is the most important characteristic of the growth process, namely the supersaturation are discussed. The considered model allows to conclude, that a optimal value of the supersaturation exists, at which the structural perfection is maximal.