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Morphology of SiC epitaxial layers grown by temperature gradient zone melting (III). Polytypical non‐uniformity
Author(s) -
Peev N. S.
Publication year - 1987
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170220625
Subject(s) - epitaxy , microelectronics , materials science , chemistry , nanotechnology , layer (electronics)